- Part Status :
- Package / Case :
- Voltage - Supply :
- Channel Type :
- Driven Configuration :
- Current - Peak Output (Source, Sink) :
- Rise / Fall Time (Typ) :
14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
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1,222
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IXYS Integrated Circuits Division | 2A 8 DIP DUAL INVERTING | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | - | 7.5ns, 6.5ns | |||
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2,111
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IXYS Integrated Circuits Division | 2A MOSFET 8 DIP DUAL INV/NON-INV | - | Active | Tube | Inverting, Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | - | 7.5ns, 6.5ns | |||
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3,743
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Infineon Technologies | IC DRVR HALF BRDG SELF-OSC 8-DIP | - | Obsolete | Tube | RC Input Circuit | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 15.6 V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | - | 600V | 80ns, 45ns | |||
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2,914
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IXYS Integrated Circuits Division | MOSFET DVR ULT FAST 14A 8-DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | - | 25ns, 18ns | |||
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3,241
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IXYS Integrated Circuits Division | MOSFET N-CH 2A DUAL LO SIDE 8-DI | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | - | 7.5ns, 6.5ns | |||
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886
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IXYS Integrated Circuits Division | IC GATE DVR 4A INV 8-DIP | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | - | 9ns, 8ns | |||
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1,482
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IXYS Integrated Circuits Division | IC GATE DVR 4A DUAL ENABLE 8DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | - | 9ns, 8ns | |||
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3,942
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IXYS Integrated Circuits Division | IC GATE DVR 4A DUAL NONINV 8DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm), 6 Leads | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | - | 9ns, 8ns | |||
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2,164
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8-DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | |||
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2,541
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IXYS Integrated Circuits Division | IC GATE DVR 4A DUAL HS 8DIP | - | Active | Tube | Inverting, Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | - | 9ns, 8ns | |||
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1,443
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | |||
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3,760
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8DIP | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | |||
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2,574
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IXYS Integrated Circuits Division | 14A 8 PIN DIP NON INVERTING | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | - | 25ns, 18ns | |||
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770
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IXYS Integrated Circuits Division | 14A 8 PIN DIP INVERTING | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | - | 25ns, 18ns |
