- Part Status :
- Mounting Type :
- Package / Case :
-
- 14-DIP (0.300", 7.62mm) (1)
- 14-SOIC (0.154", 3.90mm Width) (1)
- 28-DIP (0.600", 15.24mm) (4)
- 28-SOIC (0.295", 7.50mm Width) (6)
- 44-LCC (J-Lead), 32 Leads (6)
- 6-VDFN Exposed Pad (1)
- 8-DIP (0.300", 7.62mm) (56)
- 8-DIP (0.300", 7.62mm), 6 Leads (1)
- 8-SOIC (0.154", 3.90mm Width) (56)
- 8-SOIC (0.154", 3.90mm Width) Exposed Pad (13)
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) (3)
- TO-220-5 (19)
- TO-220-5 Formed Leads (3)
- TO-263-6, D²Pak (5 Leads + Tab), TO-263BA (5)
- Channel Type :
- Driven Configuration :
- Current - Peak Output (Source, Sink) :
- Applied Filters :
164 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
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3,583
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Infineon Technologies | IC DRIVER BRIDGE 3-PHASE 28-DIP | - | Obsolete | Tube | Inverting, Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 28-DIP (0.600", 15.24mm) | 28-PDIP | 11.5 V ~ 20 V | 3-Phase | Half-Bridge | 6 | IGBT, N-Channel MOSFET | 0.8V, 3V | 200mA, 350mA | 600V | 125ns, 50ns | ||||
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1,616
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Infineon Technologies | IC DRIVER BRIDGE 3-PHASE 44-PLCC | - | Obsolete | Tube | Inverting, Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 44-LCC (J-Lead), 32 Leads | 44-PLCC, 32 Leads (16.58x16.58) | 11.5 V ~ 20 V | 3-Phase | Half-Bridge | 6 | IGBT, N-Channel MOSFET | 0.8V, 3V | 200mA, 350mA | 600V | 125ns, 50ns | ||||
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1,946
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Infineon Technologies | IC DRIVER BRIDGE 3PHASE 28SOIC | - | Obsolete | Tube | Inverting, Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC | 11.5 V ~ 20 V | 3-Phase | Half-Bridge | 6 | IGBT, N-Channel MOSFET | 0.8V, 3V | 200mA, 350mA | 600V | 125ns, 50ns | ||||
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602
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Infineon Technologies | IC DRIVER 3PHASE 600V 44PLCC | - | Obsolete | Tube | Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 44-LCC (J-Lead), 32 Leads | 44-PLCC, 32 Leads (16.58x16.58) | 12 V ~ 20 V | 3-Phase | Half-Bridge | 6 | IGBT, N-Channel MOSFET | 0.8V, 3V | 200mA, 350mA | 600V | 125ns, 50ns | ||||
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3,149
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IXYS | IC MOSFET DRIVER LS 2A 8SOIC | - | Obsolete | Tube | Inverting | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | - | 8ns, 8ns | ||||
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1,179
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Microchip Technology | IC MOSFET DVR 1.2A DUAL HS 8DIP | - | Obsolete | Tube | Non-Inverting | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | 4.5 V ~ 16 V | Independent | Low-Side | 2 | N-Channel, P-Channel MOSFET | 0.8V, 3V | 1.2A, 1.2A | - | 35ns, 25ns | ||||
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883
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Microchip Technology | IC MOSFET DVR 1.2A DUAL HS 8MSOP | - | Obsolete | Tube | Inverting, Non-Inverting | 0°C ~ 70°C (TA) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP | 4.5 V ~ 16 V | Independent | Low-Side | 2 | N-Channel, P-Channel MOSFET | 0.8V, 3V | 1.2A, 1.2A | - | 35ns, 25ns | ||||
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3,065
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Microchip Technology | IC MOSFET DVR 1.2A DUAL HS 8MSOP | - | Obsolete | Tube | Non-Inverting | 0°C ~ 70°C (TA) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP | 4.5 V ~ 16 V | Independent | Low-Side | 2 | N-Channel, P-Channel MOSFET | 0.8V, 3V | 1.2A, 1.2A | - | 35ns, 25ns | ||||
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1,094
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Microchip Technology | IC MOSFET DVR 1.2A DUAL HS 8MSOP | - | Obsolete | Tube | Inverting | 0°C ~ 70°C (TA) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP | 4.5 V ~ 16 V | Independent | Low-Side | 2 | N-Channel, P-Channel MOSFET | 0.8V, 3V | 1.2A, 1.2A | - | 35ns, 25ns | ||||
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2,130
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IXYS Integrated Circuits Division | 14A 8SOIC EXP MTL NON INVERTING | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | - | 25ns, 18ns | ||||
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987
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IXYS Integrated Circuits Division | 14A 8LEAD SOIC EXP MTL INVERTING | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | - | 25ns, 18ns | ||||
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1,941
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IXYS Integrated Circuits Division | 14A 8SOIC EXP MTL NON INV W/ENAB | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | - | 25ns, 18ns | ||||
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1,353
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Microchip Technology | IC MOSFET DVR HS 9A INV TO220-5 | - | Active | Tube | Inverting | 0°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 4.5 V ~ 18 V | Single | Low-Side | 1 | N-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 20ns, 24ns | ||||
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2,834
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Microchip Technology | IC DRIVER MOSFET 9A LS TO220-5 | - | Active | Tube | Non-Inverting | 0°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 4.5 V ~ 18 V | Single | Low-Side | 1 | N-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 20ns, 24ns | ||||
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3,229
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Microchip Technology | IC DRIVER MOSFET 9A LS 8-DIP | - | Active | Tube | Non-Inverting | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | 4.5 V ~ 18 V | Single | Low-Side | 1 | N-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 20ns, 24ns | ||||
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2,335
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Infineon Technologies | IC DRIVER HIGH/LOW SIDE 8-DIP | - | Active | Tube | Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 3V | 210mA, 360mA | 600V | 100ns, 50ns | ||||
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756
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Microchip Technology | IC MOSFET DVR HS 9A INV 8-DIP | - | Active | Tube | Inverting | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | 4.5 V ~ 18 V | Single | Low-Side | 1 | N-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 20ns, 24ns | ||||
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2,188
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Microchip Technology | IC MOSFET DVR HS 9A INV 8-DIP | - | Active | Tube | Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | 4.5 V ~ 18 V | Single | Low-Side | 1 | N-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 20ns, 24ns | ||||
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2,347
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV TO263-5 | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | TO-263-5 | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | ||||
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1,265
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV TO220-5 | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 Formed Leads | TO-220-5 | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | ||||
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869
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV TO220-5 | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | ||||
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1,498
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV TO263-5 | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | TO-263 | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | ||||
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857
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IXYS Integrated Circuits Division | IC MOSFET DRIVER 3A SOIC | - | Active | Tube | Inverting, Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 4.5 V ~ 30 V | Independent | Low-Side | 2 | N-Channel, P-Channel MOSFET | 0.8V, 3V | 3A, 3A | - | 18ns, 18ns | ||||
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1,222
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IXYS Integrated Circuits Division | 2A 8 DIP DUAL INVERTING | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | - | 7.5ns, 6.5ns | ||||
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2,111
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IXYS Integrated Circuits Division | 2A MOSFET 8 DIP DUAL INV/NON-INV | - | Active | Tube | Inverting, Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | - | 7.5ns, 6.5ns | ||||
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2,129
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Microchip Technology | IC DRIVER MOSFET 9A LS 8-SOIC | - | Active | Tube | Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 4.5 V ~ 18 V | Single | Low-Side | 1 | N-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 20ns, 24ns | ||||
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3,680
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Infineon Technologies | IC DRIVER BRIDGE 3-PHASE 28-DIP | - | Active | Tube | Inverting | -40°C ~ 150°C (TJ) | Through Hole | 28-DIP (0.600", 15.24mm) | 28-PDIP | 10 V ~ 20 V | 3-Phase | Half-Bridge | 6 | IGBT, N-Channel MOSFET | 0.8V, 3V | 200mA, 350mA | 600V | 125ns, 50ns | ||||
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2,172
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IXYS Integrated Circuits Division | IC GATE DVR 9A DUAL HS TO220-5 | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | ||||
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2,160
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IXYS Integrated Circuits Division | IC GATE DVR 9A DUAL HS TO263-5 | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | TO-263-5 | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | ||||
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3,488
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Infineon Technologies | IC DRIVER 600V 200/420MA 8-DIP | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 9 V ~ 20 V | Single | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600V | 80ns, 40ns |