EPC2016
- MANUFACTURER
- EPC
- PRODUCT CATEGORY
- Transistors - FETs, MOSFETs - Single
- Description
- TRANS GAN 100V 11A BUMPED DIE
NO PRICE
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- Manufacturer :
- EPC
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 11A (Ta)
- Drain to Source Voltage (Vdss) :
- 100V
- Drive Voltage (Max Rds On, Min Rds On) :
- 5V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 5.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 520pF @ 50V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 125°C (TJ)
- Package / Case :
- Die
- Packaging :
- Digi-Reel®
- Part Status :
- Discontinued at Digi-Key
- Power Dissipation (Max) :
- -
- Rds On (Max) @ Id, Vgs :
- 16 mOhm @ 11A, 5V
- Series :
- eGaN®
- Supplier Device Package :
- Die
- Technology :
- GaNFET (Gallium Nitride)
- Vgs (Max) :
- +6V, -5V
- Vgs(th) (Max) @ Id :
- 2.5V @ 3mA
- Datasheet :
- EPC2016
Cross References
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05/11/2022
05/11/2022
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05/11/2022
Search Part Number: "EPC2" Included word is 15
| Part Number | Manufacturer | Stock | Description |
|---|---|---|---|
| EPC2036ENGRT | EPC | 3,152 | MOSFET N-CH 100V 1.7A DIE |
| EPC2036ENGRT | EPC | 946 | MOSFET N-CH 100V 1.7A DIE |
| EPC2036ENGRT | EPC | 1,803 | MOSFET N-CH 100V 1.7A DIE |
| EPC2034ENGRT | EPC | 3,270 | TRANS GAN 200V 31A BUMPED DIE |
| EPC2034ENGRT | EPC | 878 | TRANS GAN 200V 31A BUMPED DIE |
| EPC2023ENG | EPC | 3,707 | TRANS GAN 30V 60A BUMPED DIE |
| EPC2016 | EPC | 3,148 | TRANS GAN 100V 11A BUMPED DIE |
| EPC2016 | EPC | 1,937 | TRANS GAN 100V 11A BUMPED DIE |
| EPC2015 | EPC | 966 | TRANS GAN 40V 33A BUMPED DIE |
| EPC2015 | EPC | 943 | TRANS GAN 40V 33A BUMPED DIE |
| EPC2015 | EPC | 739 | TRANS GAN 40V 33A BUMPED DIE |
| EPC2012 | EPC | 2,656 | TRANS GAN 200V 3A BUMPED DIE |
| EPC2012 | EPC | 2,271 | TRANS GAN 200V 3A BUMPED DIE |
| EPC2012 | EPC | 2,701 | TRANS GAN 200V 3A BUMPED DIE |
| EPC2010 | EPC | 1,839 | TRANS GAN 200V 12A BUMPED DIE |
