MS652S
- MANUFACTURER
- Microsemi Corporation
- PRODUCT CATEGORY
- Transistors - Bipolar (BJT) - RF
- Description
- TRANS RF BIPO 25W 2A M123
NO PRICE
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- Manufacturer :
- Microsemi Corporation
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Current - Collector (Ic) (Max) :
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 200mA, 5V
- Frequency - Transition :
- 450MHz ~ 512MHz
- Gain :
- 10dB
- Mounting Type :
- Chassis Mount
- Noise Figure (dB Typ @ f) :
- -
- Operating Temperature :
- 200°C (TJ)
- Package / Case :
- M123
- Packaging :
- Bulk
- Part Status :
- Obsolete
- Power - Max :
- 25W
- Series :
- -
- Supplier Device Package :
- M123
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 16V
- Datasheet :
- MS652S
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Lastest News
05/11/2022
05/11/2022
05/11/2022
05/11/2022
