PMV65ENEAR

Manufacturer :

Nexperia USA Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.7A (Ta)

Drain to Source Voltage (Vdss) :

40V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 20V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

490mW (Ta), 6.25W (Tc)

Rds On (Max) @ Id, Vgs :

75 mOhm @ 2.7A, 10V

Series :

Automotive, AEC-Q101

Supplier Device Package :

TO-236AB (SOT23)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA