PMT200EN,115

Manufacturer :

NXP USA Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

1.8A (Ta)

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

475pF @ 80V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

800mW (Ta), 8.3W (Tc)

Rds On (Max) @ Id, Vgs :

235 mOhm @ 1.5A, 10V

Series :

-

Supplier Device Package :

SOT-223

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA