RQ3E080BNTB
Brand
Rohm Semiconductor › View brand page
ROHM was established in Kyoto, Japan, in 1958. ROHM designs and manufactures semiconductors, integrated circuits and oth...
| Category | Transistors - FETs, MOSFETs - Single |
|---|
Price
Price
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In Stock · 3170 pcs available
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Specifications
| Brand | Rohm Semiconductor | Category | Transistors - FETs, MOSFETs - Single |
|---|---|---|---|
| Series | - | Part Status | Active |
| Packaging | Technology | ||
| Operating Temperature | 150°C (TJ) | Mounting Type | |
| Package / Case | 8-PowerVDFN | Supplier Device Package | 8-HSMT (3.2x3) |
| Power Dissipation (Max) | 2W (Ta) | FET Type | |
| FET Feature | - | Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) | Rds On (Max) @ Id, Vgs | 15.2 mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | Gate Charge (Qg) (Max) @ Vgs | 14.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 15V | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) |
