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TC58NVG2S0HBAI4

MANUFACTURER
Toshiba Memory America, Inc.
PRODUCT CATEGORY
Memory
Description
IC EEPROM 4GBIT 25NS 63TFBGA

NO PRICE

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Manufacturer :
Toshiba Memory America, Inc.
Product Category :
Memory
Access Time :
25ns
Clock Frequency :
-
Memory Format :
Flash
Memory Interface :
Parallel
Memory Size :
4Gb (512M x 8)
Memory Type :
Non-Volatile
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 85°C (TA)
Package / Case :
63-VFBGA
Packaging :
Tray
Part Status :
Active
Series :
-
Supplier Device Package :
63-TFBGA (9x11)
Technology :
FLASH - NAND (SLC)
Voltage - Supply :
2.7 V ~ 3.6 V
Write Cycle Time - Word, Page :
25ns
Datasheet :
TC58NVG2S0HBAI4

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Search Part Number: "TC58" Included word is 15

Part Number Manufacturer Stock Description
TC58NYG2S0HBAI4 Toshiba Memory America, Inc. 2,481 4GB SLC NAND 24NM BGA 9X11 1.8V
TC58NYG1S3HBAI4 Toshiba Memory America, Inc. 1,394 2GB NAND SLC 24NM BGA (EEPROM)
TC58CYG2S0HRAIG Toshiba Memory America, Inc. 1,413 4GB SERIAL NAND 24NM WSON 1.8V
TC58CYG1S3HRAIG Toshiba Memory America, Inc. 636 2GB SERIAL NAND 24NM WSON 1.8V
TC58CYG0S3HRAIG Toshiba Memory America, Inc. 3,985 1GB SERIAL NAND 24NM WSON 1.8V
TC58CVG1S3HRAIG Toshiba Memory America, Inc. 3,210 2GB SERIAL NAND 24NM WSON 3.3V
TC58BYG1S3HBAI4 Toshiba Memory America, Inc. 822 2GB SLC NAND BGA 24NM I TEMP (EE
TC58BYG0S3HBAI4 Toshiba Memory America, Inc. 2,566 1GB SLC NAND BGA 24NM I TEMP (EE
TC58BVG1S3HBAI4 Toshiba Memory America, Inc. 3,393 2GB SLC BENAND 24NM BGA 9X11 (EE
TC58CVG2S0HRAIG Toshiba Memory America, Inc. 1,900 4GB SERIAL NAND 24NM WSON8 3.3V
TC58CVG0S3HRAIG Toshiba Memory America, Inc. 715 1GB SERIAL NAND 24NM WSON8 3.3V
TC58CVG2S0HQAIE Toshiba Memory America, Inc. 3,231 4GB SERIAL NAND 24NM SOP16 3.3V
TC58CYG0S3HQAIE Toshiba Memory America, Inc. 2,074 1GB SERIAL NAND 24NM SOP16 1.8V
TC58CVG0S3HQAIE Toshiba Memory America, Inc. 2,749 1GB SERIAL NAND 24NM SOP16 3.3V
TC58NYG0S3HBAI6 Toshiba Memory America, Inc. 874 IC EEPROM 1GBIT 25NS 67VFBGA

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