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- Manufacturer :
- Toshiba Memory America, Inc.
- Product Category :
- Memory
- Access Time :
- 25ns
- Clock Frequency :
- -
- Memory Format :
- Flash
- Memory Interface :
- Parallel
- Memory Size :
- 4Gb (512M x 8)
- Memory Type :
- Non-Volatile
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 85°C (TA)
- Package / Case :
- 63-VFBGA
- Packaging :
- Tray
- Part Status :
- Active
- Series :
- -
- Supplier Device Package :
- 63-TFBGA (9x11)
- Technology :
- FLASH - NAND (SLC)
- Voltage - Supply :
- 2.7 V ~ 3.6 V
- Write Cycle Time - Word, Page :
- 25ns
- Datasheet :
- TC58NVG2S0HBAI4
Cross References
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Lastest News
05/11/2022
05/11/2022
05/11/2022
05/11/2022
Search Part Number: "TC58" Included word is 15
Part Number | Manufacturer | Stock | Description |
---|---|---|---|
TC58NYG2S0HBAI4 | Toshiba Memory America, Inc. | 2,481 | 4GB SLC NAND 24NM BGA 9X11 1.8V |
TC58NYG1S3HBAI4 | Toshiba Memory America, Inc. | 1,394 | 2GB NAND SLC 24NM BGA (EEPROM) |
TC58CYG2S0HRAIG | Toshiba Memory America, Inc. | 1,413 | 4GB SERIAL NAND 24NM WSON 1.8V |
TC58CYG1S3HRAIG | Toshiba Memory America, Inc. | 636 | 2GB SERIAL NAND 24NM WSON 1.8V |
TC58CYG0S3HRAIG | Toshiba Memory America, Inc. | 3,985 | 1GB SERIAL NAND 24NM WSON 1.8V |
TC58CVG1S3HRAIG | Toshiba Memory America, Inc. | 3,210 | 2GB SERIAL NAND 24NM WSON 3.3V |
TC58BYG1S3HBAI4 | Toshiba Memory America, Inc. | 822 | 2GB SLC NAND BGA 24NM I TEMP (EE |
TC58BYG0S3HBAI4 | Toshiba Memory America, Inc. | 2,566 | 1GB SLC NAND BGA 24NM I TEMP (EE |
TC58BVG1S3HBAI4 | Toshiba Memory America, Inc. | 3,393 | 2GB SLC BENAND 24NM BGA 9X11 (EE |
TC58CVG2S0HRAIG | Toshiba Memory America, Inc. | 1,900 | 4GB SERIAL NAND 24NM WSON8 3.3V |
TC58CVG0S3HRAIG | Toshiba Memory America, Inc. | 715 | 1GB SERIAL NAND 24NM WSON8 3.3V |
TC58CVG2S0HQAIE | Toshiba Memory America, Inc. | 3,231 | 4GB SERIAL NAND 24NM SOP16 3.3V |
TC58CYG0S3HQAIE | Toshiba Memory America, Inc. | 2,074 | 1GB SERIAL NAND 24NM SOP16 1.8V |
TC58CVG0S3HQAIE | Toshiba Memory America, Inc. | 2,749 | 1GB SERIAL NAND 24NM SOP16 3.3V |
TC58NYG0S3HBAI6 | Toshiba Memory America, Inc. | 874 | IC EEPROM 1GBIT 25NS 67VFBGA |