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RN1309,LF

MANUFACTURER
Toshiba Semiconductor and Storage
PRODUCT CATEGORY
Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
X34 PB-F USM TRANSISTOR PD 100MW
Per Unit
$0.0261

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Manufacturer :
Toshiba Semiconductor and Storage
Product Category :
Transistors - Bipolar (BJT) - Single, Pre-Biased
Current - Collector (Ic) (Max) :
100mA
Current - Collector Cutoff (Max) :
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 5mA, 5V
Frequency - Transition :
250MHz
Mounting Type :
Surface Mount
Package / Case :
SC-70, SOT-323
Packaging :
-
Part Status :
Active
Power - Max :
100mW
Resistor - Base (R1) :
47 kOhms
Resistor - Emitter Base (R2) :
22 kOhms
Series :
-
Supplier Device Package :
USM
Transistor Type :
NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max) :
50V
Datasheet :
RN1309,LF

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