SSM3J108TU(TE85L)

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

1.8A (Ta)

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

3-SMD, Flat Leads

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

500mW (Ta)

Rds On (Max) @ Id, Vgs :

158 mOhm @ 800mA, 4V

Series :

U-MOSIII

Supplier Device Package :

UFM

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 1mA