TK55S10N1,LQ

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

55A (Ta)

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3280pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

157W (Tc)

Rds On (Max) @ Id, Vgs :

6.5 mOhm @ 27.5A, 10V

Series :

U-MOSVIII-H

Supplier Device Package :

DPAK+

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 500µA