SI3867DV-T1-E3

Manufacturer :

Vishay Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3.9A (Ta)

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

1.1W (Ta)

Rds On (Max) @ Id, Vgs :

51 mOhm @ 5.1A, 4.5V

Series :

TrenchFET®

Supplier Device Package :

6-TSOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.4V @ 250µA