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RN1701JE(TE85L,F)

MANUFACTURER
Toshiba Semiconductor and Storage
PRODUCT CATEGORY
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description
TRANS 2NPN PREBIAS 0.1W ESV

NO PRICE

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Manufacturer :
Toshiba Semiconductor and Storage
Product Category :
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Current - Collector (Ic) (Max) :
100mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 10mA, 5V
Frequency - Transition :
250MHz
Mounting Type :
Surface Mount
Package / Case :
SOT-553
Packaging :
Cut Tape (CT)
Part Status :
Discontinued at Digi-Key
Power - Max :
100mW
Resistor - Base (R1) :
4.7 kOhms
Resistor - Emitter Base (R2) :
4.7 kOhms
Series :
-
Supplier Device Package :
ESV
Transistor Type :
2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max) :
50V
Datasheet :
RN1701JE(TE85L,F)

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