RN1701JE(TE85L,F)
- MANUFACTURER
- Toshiba Semiconductor and Storage
- PRODUCT CATEGORY
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Description
- TRANS 2NPN PREBIAS 0.1W ESV
NO PRICE
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- Manufacturer :
- Toshiba Semiconductor and Storage
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA, 5V
- Frequency - Transition :
- 250MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-553
- Packaging :
- Digi-Reel®
- Part Status :
- Discontinued at Digi-Key
- Power - Max :
- 100mW
- Resistor - Base (R1) :
- 4.7 kOhms
- Resistor - Emitter Base (R2) :
- 4.7 kOhms
- Series :
- -
- Supplier Device Package :
- ESV
- Transistor Type :
- 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Datasheet :
- RN1701JE(TE85L,F)
Cross References
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Lastest News
05/11/2022
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